Topic | Movie | Slide Show | Keywords |
Materials and gas systems | 988 k | 4 slides | Traditional materials and etch chemistries, etch chemistries for materials with giant (GMR) and colossal (CMR) magneto resistance |
Non-equilibrium plasmas | n/a | 1 slide | Typical conditions for non-equilibrium plasmas, peak power density, average power at wafer surface |
Reactive and condensable species | 180 k | 2 slides | Sticking coefficient, reaction probability, surface coverage, substrate temperature, example: etching of tungsten with chlorine and oxygen |
Electron energy distribution function | n/a | 1 slide | Electron temperature, dissociation and ionization energies |
Electron - molecule collisions | n/a | 1 slide | Electron attachment, ionization, dissociation |
Electron-impact dissociation | 444 k | 3 slides | Formation of reactive radicals, dissociative ionization, formation of negative ion fragments and neutrals |
Electron-impact ionization |
Dissociative electron attachment |
Surface processes | 788 k | 4 slides | Adsorption, physisorption, chemisorption, desorption, ion surface neutralization, fragmentation, sputtering |
Ions and radicals in a plasma | 520 k | 2 slides | Low density plasma: MERIE, SF-CCP
High density plasma: DF-CCP, UHF-CCP, ICP, ECR |
Etch mechanisms | 1.2 M | 3 slides | Chemical etching, ion enhanced etching, physical etching, trenching, sidewall passivation |
Spontaneous etching reactions | 4.5 M | 6 slides | Radicals, XeF2 surface reaction, gas additives, isotropic etch, etch selectivity, resist trim |
Role of ion bombardment | 1.9 M | 4 slides | Physical sputtering, ion induced damage and mixing, ion enhanced chemical reaction, chemical sputtering, anisotropy, ion energy flux |
Etching profiles | n/a | 1 slide | Anisotropic etching, tapering, bowing, undercutting, notching |
The trenching phenomenon | 2.0 M | 4 slides | Ion scattering, ion deflection, ion angular distribution, fast protons, microtrenching |
Sidewall passivation layer formation | 428 k | 3 slides | Reaction by-products, backsputtering, gas phase passivation, condensation |
Loading effects and aspect ratio dependent etching | 308 k | 6 slides | Macroscopic loading, microscopic loading, etch rate dependent etching (ARDE), RIE lag |
Knudsen Transport of Neutrals | n/a | 1 slide | Transmission probability, reaction probability |
Charging effects | 2.5 M | 6 slides | Difference in directionality between ions and electrons, energy and angular distributions of electrons and ions, mask charging, ion trajectory distortion |
Temperature effects | 464 k | 2 slides | Reaction probabilities, vapor pressure, re-deposition, selectivity and profile control |
Silicon plasma etching mechanism with HBr and Cl2 | 972 k | 4 slides | Halogenated layer, amorphized layer, neutral flux, ion flux, steric hindrance |
Plasma Potentials in Planar Systems | 844 k | 4 slides | Capacitive sheath approximation, plasma potentials, excitation electrode voltages, dc coupling, capacitive coupling, symmetric and asymmetric reactor |
Capacitive and inductive coupling | 1.4 M | 10 slides | Capacitive and inductive coupling, ion energy distribution, Ohmic heating, stochastic heating, frequency effects, magnetic field effects, electron cyclotron resonance |
MERIE and high density plasmas | 2.0 M | 4 slides | Process parameters, species concentrations, etch mechanisms, etch performance |
