Topic | Movie | Slide Show | Keywords |
Influence of Mask material in silicon gate etching | 1.4 M | 8 slides | Resist mask, dielectric hardmask, carbon hardmask, gate oxide selectivity, reactive layer, carbon concentration on gate oxide, resist coverage, mask selectivity, mask charging, pre-doped gate stack |
Sidewall passivation layer formation during gate etch | 2.2 M | 7 slides | anisotropy, sidewall analysis with XPS, mask materials, gas mixtures, oxygen flow, overetch |
The selfclean chemistry concept | 504 k | 4 slides | Etch by-products, sidewall deposition, chamber wall deposition, volatile and non-volatile etch products |
RIE lag in poly-Si and silicide etching | n/a | 1 slide | chlorine chemistry, gas additives |
CD control for gate etch process | 2.3 M | 10 slides | Critical dimension, sidewall passivation thickness, balance between etch and deposition, gas phase deposition, line of sight re-deposition |
Doping effect: Dual Gate Etching | 216 k | 5 slides | Chlorine etch mechanism of doped poly-Si, CF4 and NF3 addition, carbon inhibitor, Coulomb attraction and repulsion, pressure effect |
Softlanding During Gate Etching | 1.0 M | 6 slides | Effect of oxygen addition for resist and hardmask stacks |
Gate oxide preservation | 2.1 M | 7 slides | overetch, re-oxidation, perturbated layer, amorphization of bulk silicon, gate oxide recess, hydrogen and oxygen implantation |
Thin gate oxide behavior during the overetch step | 2.7 M | 8 slides | In-situ reflectometry, gate oxide punchthrough, silicon loading, plasma oxidation |
The « notched gate » | 2.4 M | 8 slides | transistor speed, sidewall passivation and oxidation, notch control, CD control, spontaneous etching, chamber wall conditions, microloading |
Resist Trimming | 3.1 M | 13 slides | chemistry effects, dense / iso behavior, resist sidewalls, trim rate, reactive layer, resist bending, line edge roughness |
Fundamentals of shallow trench etching | 1.2 M | 4 slides | process requirements, mask dependent etch chemistries, chemistry dependdent sidewall passivation, profile microloading |
Bottom Corner Rounding | 1.0 M | 4 slides | bottom corner rounding for chlorine and HBr based plasmas |
Top Corner Rounding | 732 k | 4 slides | carbon polymer top corner rounding, multiple step top corner rounding, faceting, striation |
Metal Gate Etch | 2.7 M | 15 slides | TiN, TaN, compatibility between polysilicon and metal gate etch chemistries, chamber wall deposition and dry cleans |
High k Etch | 7.3 M | 7 slides | selectivity mechanism at elevated temperatures, bias power effect at room temperatures, chamber wall effects |
Contact Etch | 656 k | 6 slides | flourocarbon polymers, flourocarbon deposition, fluorocarbon suppression, chemically enhanced etching, ARDE |
ARDE in SAC Etch | 1.7 M | 9 slides | RIE lag for silane oxide, BSG, PSG, and BPSG, influence of resist type, oxygen and CO addition |
Etching of porous SiOCH | 6.7 M | 6 slides | Sidewall passivation mechnism for different etch mask materials, temperature effect, pore diffusion |
Etching of SiCO: Effect of Pores | 1.2 M | 3 slides | Plasma chemistry, surface polymerization, etch rate, etch stop, surface roughness |
