US Patent Number | Title | Assignee | Date of Patent |
6680232 | Trench etch with incremental oxygen flow | Fairchild Semiconductor Corporation | 1/20/2004 |
6680233 | Semiconductor device formed with disposable spacer and liner using high-K material and method of fabrication | Advanced Micro Devices, Inc. | 1/20/2004 |
6680255 | Plasma etching methods | Micron Technology, Inc | 1/20/2004 |
6682657 | Three dimensional etching process | Qinetiq Limited | 1/27/2004 |
6682965 | Method of forming n-and p- channel field effect transistors on the same silicon layer having a strain effect | Sony Corporation | 1/27/2004 |
6682994 | Methods for transistor gate formation using gate sidewall implantation | Texas Instruments Incorporated | 1/27/2004 |
6686558 | Atmospheric pressure inductive plasma apparatus | TimeDomain CVD, Inc. | 2/3/2004 |
6686637 | Gate structure with independently tailored vertical doping profile | International Business Machines Corporation | 2/3/2004 |
6689650 | Fin field effect transistor with self-aligned gate | International Business Machines Corporation | 2/10/2004 |
6689702 | High dielectric constant metal oxide gate dielectrics | Intel Corporation | 2/10/2004 |
6693333 | Semiconductor-on-insulator circuit with multiple work functions | Advanced Micro Devices, Inc. | 2/17/2004 |
