Plasma Technology for Advanced Devices

US Patent Number

Title

Assignee

Date of Patent

6680232

Trench etch with incremental oxygen flow

Fairchild Semiconductor Corporation

1/20/2004

6680233

Semiconductor device formed with disposable spacer and liner using high-K material and method of fabrication

Advanced Micro Devices, Inc.

1/20/2004

6680255

Plasma etching methods

Micron Technology, Inc

1/20/2004

6682657

Three dimensional etching process

Qinetiq Limited

1/27/2004

6682965

Method of forming n-and p- channel field effect transistors on the same silicon layer having a strain effect

Sony Corporation

1/27/2004

6682994

Methods for transistor gate formation using gate sidewall implantation

Texas Instruments Incorporated

1/27/2004

6686558

Atmospheric pressure inductive plasma apparatus

TimeDomain CVD, Inc.

2/3/2004

6686637

Gate structure with independently tailored vertical doping profile

International Business Machines Corporation

2/3/2004

6689650

Fin field effect transistor with self-aligned gate

International Business Machines Corporation

2/10/2004

6689702

High dielectric constant metal oxide gate dielectrics

Intel Corporation

2/10/2004

6693333

Semiconductor-on-insulator circuit with multiple work functions

Advanced Micro Devices, Inc.

2/17/2004

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