Plasma Technology for Advanced Devices

Clarycon News Archive: Freescale

12/5/2005
Freescale Semiconductor shows at IEDM a breakthrough transistor that overcomes many of the design and manufacturing challenges associated with vertical multi-gate devices. The invention, called the Inverted T Channel-Field Effect Transistor (ITFET) device, features the industry's first ever combination of vertical and planar thin body structures within a single transistor. The technology hastens delivery of a new breed of dramatically smaller, higher performing semiconductors that require less power. Source: www.physorg.com

Left: The double gate vertical planar thin body surface; Right: ITFET image of the channel region with multiple surface orientation.

6/12/2003
Researchers of the Motorola Digital DNA Laboratories report at the VLSI symposium in Kyoto for the first time that Fermi pinning at the polySi/metal oxide interface causes high threshold voltages in MOSFET devices. Results indicate that pinning occurs due to the interfacial Si-Hf and Si-O-Al bonds for HfO2 and Al2O3, respectively. This fundamental characteristic also affects the observed polySi depletion. Source: '

6/23/2003
Motorola starts transferring silicon-on-insulator (SOI) capability to the 90-nanometer manufacturing process technology being developed by the alliance of Motorola, Philips, STMicroelectronics and Taiwan Semiconductor Manufacturing Company Ltd. at Crolles, France. Source: SBN

11/10/2003
Motorola announces that researchers at it's semiconductor labs in Austin, Texas have built a first-of-its-kind transistor that could provide a major boost to the continuing drive toward smaller, more powerful chips. Called the Multiple Independent Gate Field Effect Transistor or MIGFET, the device allows for one transistor to contain multiple independent gates. Source:
www.motorola.com

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