Plasma Technology for Advanced Devices

8/31/10
Hynix and HP announce that they will jointly develop new materials and process integration technology to transfer HP's memristor technology from R&D to commercial development in the form of resistive random access memory (ReRAM). ReRAM is non-volatile memory with low power consumption that holds the potential to replace flash memory; it also has the potential to serve as a universal storage medium – that is, memory that can behave as flash, DRAM or even a hard drive.

9/30/05
Hynix discloses a product roadmap to mass produce NAND-based flash memory at the Sedex Korea 2005 Trade show. According to EE Times, the company will shortly launch its initial 70-nm parts, including 4-, 8-, and 16-Gbit parts. Hynix plans to sample its 16-Gbit NAND device in November, with production slated for sometime next year. Source: EE Times

3/7/03
Hynix ships the first commercial 4 and 8 Mbit FeRAM samples. The desgin can be expanded to 64 Mbit.

10/6/04
Hynix Semiconductor announces that it has completed the sale of its non-memory semiconductor operations to Citigroup Venture Capital. The non-memory division starts its business as MagnaChip Semiconductor (
www.MagnaChip.com). Source: www.hynix.com

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