Plasma Technology for Advanced Devices

Publications

Underlined titels provide link to abstract. For copies of the articles, please contact us via e-mail.

"Plasma Polymerized Methylsilane. I : Characterization of Thin Photosensitive Films for Advanced Lithography Applications"

C. Monget, O. Joubert, R. L. Inglebert, J. Vac.Sci. Technol.B18(5), 2534, (2000)

"Plasma polymerized methylsilane. II. Performance for 248 nm lithography"

C. Monget, O. Joubert, J. Vac. Sci. Technol. B 18(2), 785, (2000)

"Plasma polymerized methylsilane. III. Process optimization for 193 nm lithography applications"

O. Joubert, D. Fuard, C. Monget, T. Weidman, J. Vac. Sci. Technol. B 18(2), 793, (2000)

"Wall-dependent etching characteristics of organic antireflection coating in O2 + halogen/hydrogen halide plasma"

S. Xu, Th. Lill, D. Podlesnik, J. Vac. Sci. Technol. A 19(6), 2893, (2001)

"Interferometry for end point prediction during plasma etching of various structures in complementary metal–oxide–semiconductor device fabrication"

N. Layadi, S. J. Molloy, T. C. Esry , Th. Lill, J. Trevor, M. N. Grimbergen, J. Chinn, J. Vac. Sci. Technol. B 17(6), 2630, (1999)

"In situ measurement of aspect ratio dependent etch rates of polysilicon in an inductively coupled fluorine plasma"

Th. Lill, M. Grimbergen, D. Mui, J. Vac. Sci. Technol. B (19), 2123, (2001)

"Thin gate oxide behavior during plasma patterning of silicon gates"

L. Vallier, L. Desvoivres, M. Bonvalot, O. Joubert, Appl. Phys. Lett. 75(8), 1069, (1999)

"Characterization of dielectric etching processes by X-ray photoelectron spectroscopy analyses in high aspect ratio contact holes"

O. Joubert, P. Czuprynski, Jpn. J. Appl. Phys. Vol.38, 6154, (1999)

"Sub 0.1 µm gate etch processes: towards some limitations of the plasma technology"

L. Desvoivres, L. Vallier, O. Joubert, J. Vac.Sci.Technol.B18(1)156, (2000)

"Trends in plasma processing for ultra large scale integration technology"

O. Joubert, P. Schiavone, L. Vallier,D. Fuard, L. Desvoivres, P. Schiavone, C. Monget, P. Gouraud, P. Czuprynski, J. Tech. Phys. 41(1, special issue), 41, (2000).

"X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes"

L. Desvoivres, L. Vallier, O. Joubert, J. Vac.Sci.TechnolB19(2), 420, (2001)

"High Density Plasma etching of low k dielectric polymers in oxygen-based chemistries"

D. Fuard, O. Joubert, L. Vallier, M. Bonvalot, J.Vac Sci TechnolB19(2), 447, (2001)

"Etch mechanisms of low dielectric constant polymers in high density plasmas : impact of charging effects on profile distortion"

D. Fuard, O. Joubert, L. Vallier, M. Assous, P. Berruyer, J. Vac.Sci.Technol.B19, 2223, (2001)

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