Plasma Technology for Advanced Devices

Clarycon Flash News

Toshiba announces that is has started mass production of NAND flash memories using a 24 nm CMOS manufacturing process technology. The chip represents the smallest geometry and the highest density in NAND flash, the company says.
The technology has been applied to a 2-bit per cell 64-Gbit memory. The company also plans to offer a 32-Gbit NAND flash memory and 3-bit per cell memory based on the process technology.

Intel and Micron Technology jointly launch the industry's first 34 nm multi-level flash chip. The joint venture owned by both companies, IM Flash Technologies, has begun manufacturing the 32-Gbit flash chips, which measure 172 sq. mm. According to Intel, the new flash memory is specifically designed for solid-state discs, and will enable capacity points of over 256 Gbytes.

SAMSUNG announces that it has started sampling 1.8-inch and 2.5-inch 64-gigabyte solid state drives. The SSD is based on 50-nm, single-level-cell (SLC) 8Gb flash chips.

Toshiba introduces at the VLSI symposium a new 3D memory cell array structure using "through-holes" that could be a potential candidate for higher-density NAND flash devices. The new structure uses pillars of stacked memory elements that pass vertically through multistacked layers of electrode material, and which share peripheral circuits. The process involves driving through-holes down through a stacked substrate of gate electrodes and insulator films; filling the holes with pillars of lightly-doped silicon; and the gate electrode wraps around the silicon pillars at even intervals. More ...

Research analyst Shaw Wu claims in news reports that he believes Apple is working on smaller computers called "subnotebooks" that will be unveiled in the second half of 2007. Energy efficient, light and fast Solid State Drives (SSD's) could replace the harddrives used in laptops today and spur another round of growth for flash memory. Source: Newsfactor

Micron announces that is has developed a 25nm flash device. Technical details were not disclosed. Source:
EE Times

SanDisk introduces a 32 GB solid state drive at the 2007 CES. Solid state drives or SSD's are to be integrated into laptops. Because prices remain high, the target market are travelling professionals. "Once we begin shipping the 32 GB SSD for notebook PCs, we expect to see its increasing adoption in the coming years as we continue to reduce the cost of flash memory," said Eli Harari, SanDisk CEO. More ...

Fujitsu, Hitachi, Samsung Electronics, Seagate Technology, and Toshiba form a Hybrid Storage alliance to promote a hybrid technology that will speed the start-up process for laptops. The new storage component incorporates NAND flash memory. More ...

Samsung announces that it is sampling a 16 Gb NAND flash memory with customers – the first NAND flash using 50 nanometer (nm) process technology. The first samples of this high density NAND flash memory have a multi-level cell (MLC) design with a 4Kbyte (KB) page size to enhance both its read and write features. The new 4KB page function improves the conventional 2KB paging system for MLC NAND flash to double the read speed, while increasing write performance 150%. Samsung plans to begin mass producing its 16Gb NAND flash memory in the first quarter of 2007. Source: SAMSUNG

Toshiba is sampling 56-nm NAND flash-memory devices, with initial production slated for January. Toshiba was originally supposed to roll out 52-nm NAND devices, but the company scaled back its technical targets, and instead, devised 56-nm parts, due to the complexities of the technology, it said. More ...

Samsung announces that it has developed the industry’s first 40 nm memory device. The new 32 Gb NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture.

The new CTF-based NAND flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its simpler structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm.

In each 32Gb device, the control gate in the CTF is only 20 percent as large as a conventional control gate in a typical floating gate structure. With CTF, there is no floating gate. Instead, the data is temporarily placed in a “holding chamber” of the non-conductive layer of the flash memory composed of silicon nitride (SiN). This results in a higher level of reliability and better control of the storage current. The CTF design is enabled through the use of a TANOS structure comprised of tantalum (metal), aluminum oxide (high k material), nitride, oxide and silicon. The use of a TANOS structure marks the first application of a metal layer coupled with a high k material to the NAND device.

Samsung today announces the start of the production of a 4GB solid state (SSD) which will serve as a high speed NAND flash cache for notebooks and PCs with Microsoft's upcoming Windows Vista operating system.

Micron and Intel announce that they are sampling the industry's first NAND flash memory based on 50 nanometer process technology. The samples are 4 gigabit NAND flash devices now. The firms said they plan to mass produce devices in 2007.

November 21, 2005, Intel and Micron announced the formation of a joint venture for the production of NAND flash memory. The venture will be called IM Flash Technologies and Micron will have a 51% majority stake in it. Apple Computer announced that it will prepay $500 million to secure supply of NAND memory for it’s popular product line of iPod music players. Intel and Micron will invest $ 1.2 billion each to build and extend plants in Boise, Manassas and Lehi. The two companies have plans to invest another $ 1.4 B each over the next three years. The joint venture is expected to be finalized by the end of the year with shareholders and regulators approval pending.

Intel's product portfolio currently lacks NAND capability, even though the company's StrataFlash flash product line has NAND-like features. Micron entered the NAND flash market in July 2004. In September, Micron reported that NAND flash represented 15 percent of its net sales of $1.26 billion, a five-fold increase in NAND sales from the prior quarter.

IM Flash Technologies will concentrate on moving to 72nm and 50 nm technology, with initial production slated for early next year. Dave Baglee, Intel's former Fab 11 manager in New Mexico, and Rod Morgan, Micron's former plant manager in Virginia, will head up the new joint-venture company.

"The creation of this new company supports Intel's intent to maintain its industry-leading position in nonvolatile memory and enables us to rapidly enter a fast-growing portion of the flash market segment," said Intel CEO Paul Otellini in a statement.

Apple plans to prepay $500 million to Intel and Micron is part of its $1.25 billion commitment to prepay for NAND flash memory to five chipmakers. The other three chipmakers are Hynix Semiconductor, Samsung Electronics and Toshiba.

As the amount of data that can be stored on flash memory chips increases, they are being used in a wide array of consumer electronics and computing devices, such as music players, USB drives, cameras and cell phones. "We want to be able to produce as many of our wildly popular iPods as the market demands," Steve Jobs, CEO of Apple, said in a statement. The Apple investment in NAND flash is quite sizeable and one starts to wonder whether it is really just the supply of memory for the iPod music players that Apple is trying to secure.

Flash memory has several advantages over hard-disk drive storage: it consumes less power, it has higher resistance to shock, it's more reliable because there are no moving parts, it can read and write data faster, and it's silent in operation. These are benefits that would enhance mobile computers as well.

Micron CEO Steve Appleton predicts that the computer industry would move in coming years to using flash memory instead of hard disk drives for primary storage devices. Appleton said he expects flash memory to replace disk drives in notebook computers within five years as prices decline. That would bring dramatic increases in battery-powered computer operation as flash memory, with no moving parts, uses far less energy than hard drives.

At this years WinHEC (Windows Hardware Engineering Conference), Microsoft officials said they had begun talks with hard-disk makers to redefine how hard drives access data. Microsoft is proposing embedding a NAND flash chip in or near the hard drive to serve as a write buffer, in conjunction with "Longhorn", Microsoft's next-generation operating system.

Websites covering Apple and Apple products have been circulating predictions that the low end of Apple’s computer products will become flash based in the near future. Macworld UK quoted Hwang Chang-Gyu, president and CEO of Samsung's semiconductor business, saying that flash-memory price drops of around 40 per cent in the last year are evidence that flash is quickly getting much cheaper. "This will be big once people enjoy how much faster and convenient it is to use solid-state disks rather than hard-disk drives," Hwang said. "We're starting with 16GB and expanding to 100GB in a couple of years."

Replacing the harddrive with flash memory would allow Steve Jobs to introduce an Intel-processor / Intel-flash iBook that will be the thinnest laptop ever made boasting the best battery life of any machine. The moment this happens, the demand for flash memory will explode worldwide and Apples recent investment will provide Apple a significant competitive advantage.

Silent operation is a must for a computer at the heart of a home entertainment system. Apple has shown in the past how much emphasis it places on the silent operation of it's computers. The PowerMac G4 Cube for instance was designed without any fan. The only part of the cube generating some noise was the harddrive.

Intel  announces an investment of $450 million in Micron Technology and says that it would team with the memory chip maker to develop next-generation chips that work with future Intel products. The investment by Intel's strategic investment program Intel Capital gives the chip giant a 5.3% share in Micron the companies revealed in a joint statement. Source: '

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